The problems associated with IGT/COMFET devices in PWM converters, such as turn off current tailing and latching are largely avoided in a resonant converter. Dynamic saturation loss is identified as the predominant power loss in IGT/COMFET devices for very high frequency resonant operation. Device design change is suggested for very high frequency resonant operation applications. / M.S.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/106528 |
| Date | January 1987 |
| Creators | Rangan, Ramasamy |
| Contributors | Electrical Engineering |
| Publisher | Virginia Polytechnic Institute and State University |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis, Text |
| Format | viii, 76 leaves, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | OCLC# 16366682 |
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