The d-c. and a-c. characteristics of p-n-p diodes were measured and interpreted on the basis of present theories. The equivalent parallel capacitance of these diodes was found to decrease as (f)⁻³/₂ at high frequencies in accordance with diffusion theory; from these measurements the lifetime of a hole in the base was estimated to be about 10 microseconds.
The current fluctuations in the diode were measured by comparing them with a standard noise diode, and the results represented as a shunt noise current generator. From the frequency spectrum of the noise it was deduced that it consisted mainly of excess or 1/f noise except at low currents and high frequencies, and here the results were interpreted as a combination of shot and thermal noise. The deduced hot carrier temperature was compared with the theoretical values of Shockley and poor agreement was obtained, indicating inadequacy of the present theory. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/41046 |
| Date | January 1959 |
| Creators | Huntley, David John |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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