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Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.

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Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/566378
Date January 1981
CreatorsClark, David Robert
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
Languageen_US
Detected LanguageEnglish
Typetext, Thesis-Reproduction (electronic)
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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