Gate-to-channel parasitic capacitance minimization and source-drain leakage evaluation in germanium PMOS /

Description

Thesis (M.S.)--Rochester Institute of Technology, 2008. / Typescript. Includes bibliographical references.

Links & Downloads

1. http://hdl.handle.net/1850/9981

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/277239988
Date	January 2008
Creators	Krom, Raymond T.
Source Sets	OCLC
Language	English
Detected Language	English
Source	Online version of thesis