Development of GaN-based power electronic devices using plasma-assisted molecular beam epitaxy /

Description

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006. / Source: Dissertation Abstracts International, Volume: 67-11, Section: B, page: 6611. Adviser: Kyekyoon (Kevin) Kim. Includes bibliographical references (leaves 106-117) Available on microfilm from Pro Quest Information and Learning.

Links & Downloads

1. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3242872

Tags

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/166289918
Date	January 2006
Creators	Hong, Seung Jae,
Source Sets	OCLC
Language	English
Detected Language	English