Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2 V−1 s−1) and IZI-TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved.
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:90989 |
Date | 18 April 2024 |
Creators | Tang, Tianyu, Dacha, Preetam, Haase, Katherina, Kreß, Joshua, Hänisch, Christian, Perez, Jonathan, Krupskaya, Yulia, Tahn, Alexander, Pohl, Darius, Schneider, Sebastian, Talnack, Felix, Hambsch, Mike, Reineke, Sebastian, Vaynzof, Yana, Mannsfeld, Stefan C. B. |
Publisher | Wiley-VCH |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 1616-3028, 2207966, 10.1002/adfm.202207966, info:eu-repo/grantAgreement/China Scholarship Council/Ph.D. Program/201706310174/, info:eu-repo/grantAgreement/European Commission/H2020 | ERC | ERC-STG/714067//Revealing the electronic energy landscape of multi-layered (opto)electronic devices/ENERGYMAPS |
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