Part A of two Project Reports; Part B can be found at: http://hdl.handle.net/11375/17691 / <p>The annealing behaviour of 15N implanted, aluminum doped-SiC has been studied by measuring the differential capacitance as a function of applied bias. The samples were doubly implanted at 450°c with 45 Kev and 25 Kev ions, for a dose of 10^16/cm^2 at each energy.</p> <p> An n-i-p structure with a thick insulator region was found after annealing at 1000°c. The thickness of this i region could be substantially reduced with additional annealing at higher temperatures, and a fairly good n-p junction was obtained
after 1480°c anneal.</p> <p> About 20-30% of the implanted nitrogen ions were found to be electrically active.</p> <p> The C-V behaviour was found to have large variations with the a.c. measuring frequency.</p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/16881 |
| Date | January 1975 |
| Creators | Chan, Albert M. C. |
| Contributors | Thompson, D.A., Engineering Physics |
| Source Sets | McMaster University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
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