The goal of this thesis is to identify and to explore novel ACTFEL phosphor
materials. Several important materials properties relevant to ACTFEL phosphor
development are identified. All of these properties cannot be obtained simultaneously.
Therefore, several key phosphor materials properties are identified as critical to the
development of an ACTFEL phosphor. Then, using basic chemical trends, several
classes of potential ACTFEL phosphors are identified. These materials systems include
halides, nitrides, oxynitrides, oxides, sulfides, and inhibited concentration quenching
systems.
Representative materials from some of these proposed novel ACTFEL phosphor
materials system are developed and evaluated as electroluminescence phosphors. Most of
the ACTFEL devices made using these materials do not show any significant charge
transfer. Detailed analysis indicates that the most probable cause of the lack of charge
injection is that the phosphor threshold field is too large. This excessively large threshold
field may be associated with the energy depth of the interface states, the low density of
the interface states, or the large effective mass of the phosphor material explored.
Several possible alternative solutions are presented to reduce the threshold field of
the phosphor. These includes the use of thick-film insulator, the use of a charge injection
layer, the use of a ceramic substrate coupled with a high temperature interface reaction,
and the use of bulk doping of the phosphor. / Graduation date: 1997
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/34193 |
| Date | 13 June 1996 |
| Creators | Ang, Wie Ming |
| Contributors | Wager, John F. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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