The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions grown by
chemical beam epitaxy were investigated both theoretically and experimentally. This
heterostructure presented a type-III band alignment with the band bendings at 0.12 eV
for InAs side and 0.16 − 0.21 eV in InSb. Analysis of the temperature dependent current
voltage characteristics showed that the current through the heterojunction is caused
mostly by generation-recombination processes in the InSb and at the heterointerface. Due
to the partially overlapping valence band of InSb and the conduction band of InAs, the
second process was fast and activationless. Theoretical analysis showed that, depending
on the heterojunction parameters, the flux of non-equilibrium minority carriers may have
a different direction, explaining the experimentally observed non-monotonic coordinate
dependence of the electron beam induced current at the vicinity of heterointerface.
| Identifer | oai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/42727 |
| Date | 21 November 2013 |
| Creators | Chen, Chao-Yang |
| Contributors | Ruda, Harry E. |
| Source Sets | University of Toronto |
| Language | en_ca |
| Detected Language | English |
| Type | Thesis |
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