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A study of implantation and irradiation induced deep-level defects in 6H-SiC /

Thesis (Ph. D.)--University of Hong Kong, 1999. / Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/51346691
Date January 1998
CreatorsGong, Min.
PublisherHong Kong : University of Hong Kong,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView the Table of Contents & Abstract.

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