The deposition of hydrocarbons on silicon substrates is a topic of wide interest. This is generally related to the technological importance of silicon carbide (SiC) and a growing interest in graphene and graphitic materials. Methods for producing these materials predominantly involve high processing temperatures. In the case of SiC, these high processing temperatures often result in the formation of surface defects, which compromise the electronic properties of the material. In an effort to grow SiC films at low temperatures, a technique known as electron-beam chemical vapor deposition (EBCVD) has been developed. Most electron beam deposition techniques employ a focused beam of high-energy (20-30 keV) electrons to form nanometer-sized solid deposits on a surface. However, in an effort to deposit macroscale films, a broad beam of low-energy electrons was used.
In addition to investigating the applications of low-energy electrons in semiconductor film growth, the fundamental chemical and physical processes induced by the bombardment of adsorbate-covered surfaces with low-energy electrons were examined. Specifically, the electron-stimulated desorption of various adsorbate-substrate systems such as acetylene adsorbed on silicon, graphene oxide on silicon, and ultrathin graphite films on silicon carbide have been investigated. The yields of cation and neutral desorbates as a function incident electron energy were measured, appearance thresholds were determined and mechanisms of desorption were proposed.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/29648 |
| Date | 06 July 2009 |
| Creators | Shepperd, Kristin |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Dissertation |
Page generated in 0.0017 seconds