The electronic properties of amorphous materials are greatly affected by the density of localized states in the mobility gap of these materials. The exact shape of the density of states (DOS) distribution in amorphous selenium (a-Se) is still unresolved despite decades of research. One of the most commonly employed methods to investigate charge transport properties in high resistivity materials is time-of-flight (TOF) transient photoconductivity experiment. The TOF transient photoconductivity technique is used to measure the induced photocurrent in the external circuit when the sample is photoexcited. Information pertaining to carrier mobility and other carrier parameters are deduced from the shape of the photocurrent. The investigation of the charge transport phenomenon is well known to be a complicated task. Monte Carlo (MC) simulation method has become a standard method for carrier transport studies in amorphous materials. The purpose of this research work is to develop a Monte Carlo simulation model for charge transport in typical TOF transient photoconductivity experiment to investigate the DOS distribution in a-Se. The MC simulations were first performed for relatively simpler models for which theoretical and analytical solutions were available. The MC model developed here is based on simulating the drift of carriers resulting from photogeneration, subject to the influence of an applied electric field and multiple trapping events. The free drift time of photocarriers and their dwell time in the traps are stochastic in nature, in accordance with the probabilities of these events. Electron time-of-flight transient photocurrents were calculated in amorphous selenium as a function of the electric field. The distribution of localized states (DOS) in a-Se has been investigated by comparing the experimentally measured and calculated transient photocurrents. The analysis of multiple-trapping transport has been done by the discretization of a continuous DOS. The DOS distribution has been optimized to produce the best agreement between the calculated and measured transient photocurrents. The resulting DOS has distinct features: A first peak at ~0.30 eV below Ec with an amplitude ~1017 eV1 cm3, a second small peak (or shoulder) at 0.450.50 eV below Ec with an amplitude 10141015 eV1 cm3, and deep states with an integral concentration 10111014 cm3 lying below 0.65 eV, whose exact distribution could not be resolved because of the limitations of the available experimental data. The density of states (DOS) distribution in the vicinity of the valence band mobility edge in vacuum coated a-Se films has been investigated by calculating the MC hole transient photocurrents at different temperatures, and also the dependence of the drift mobility on the temperature and field. The calculated TOF transient photocurrents were compared with experimental data published elsewhere. It is shown that, analogous to electron transport in a-Si:H, the DOS near Ev is a featureless, monotonically decreasing distribution in energy up to Ev + 0.4 eV, without the 0.28 eV peak near the valence band which was thought to control the hole drift mobility. Such a DOS was able to account for hole TOF data reported previously by several authors to date.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:SSU.etd-06282006-121107 |
| Date | 03 July 2006 |
| Creators | Shakoor, Zahid |
| Contributors | Kasap, Safa O. |
| Publisher | University of Saskatchewan |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://library.usask.ca/theses/available/etd-06282006-121107/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to University of Saskatchewan or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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