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An Atomistic Approach to Large Scale Transport: An Investigation of the Resistivity-size Effect in Thin Films with Realistic Disorder

The resistivity-size effect has emerged as an obstacle in our pursuit of ever shrinking electronic devices. Interconnects and vias are the nanoscale copper conductors connecting within and between layers of a CPU, respectively. New materials and methods are required to address this problem. In particular, there is a critical need for a theoretical framework which can evaluate the properties of new materials in a way that reflects real-world performance. To this end, a computational methodology is developed by introducing an ab initio parameterized tight-binding model to accurately calculate electronic structure and simulating electronic transport via the calculation of the Kubo-Greenwood conductivity tensor. Transport properties are computed using the kernel polynomial method, a highly scalable approach wherein physical quantities can be represented as a weighted sum of Chebyshev polynomials. Using this combined approach, it is possible to simulate mesoscale electronic transport for systems with over 10^6 sites containing various forms of realistic disorder. Through the use of ensemble calculations, an examination of resistivity due to surface disorder and disorder due to realistic phonon fields is presented.

Identiferoai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd2023-1294
Date01 January 2024
CreatorsRichardson, William E
PublisherSTARS
Source SetsUniversity of Central Florida
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceGraduate Thesis and Dissertation 2023-2024
RightsIn copyright

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