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Preparation and characterization of titanium silicide by MEVVA implantation.

by Lai Kwong-Yu. / Thesis submitted in: December 1998. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 90-101). / Abstracts in English and Chinese. / Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Metal Silicides --- p.1 / Chapter 1.2 --- Titanium Silicide --- p.8 / Chapter 1.3 --- Goal Of This Project --- p.10 / Chapter 2 --- Sample Preparation And Experimental Methods --- p.12 / Chapter 2.1 --- MEVVA Implantation --- p.12 / Chapter 2.2 --- Sample Preparation --- p.15 / Chapter 2.2.1 --- Implantation Condition --- p.15 / Chapter 2.2.2 --- Thermal Treatment --- p.19 / Chapter 2.3 --- Characterization Methods --- p.20 / Chapter 2.3.1 --- Sheet Resistivity Measurement --- p.22 / Chapter 2.3.2 --- X-Ray Diffraction (XRD) --- p.25 / Chapter 2.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.28 / Chapter 2.3.4 --- Transmission Electron Microscopy (TEM) --- p.31 / Chapter 3 --- Characterization of As-implanted Samples --- p.36 / Chapter 3.1 --- Introduction --- p.36 / Chapter 3.2 --- Dose Dependence Of As-implanted Samples --- p.37 / Chapter 3.2.1 --- Sheet Resistance Measurement --- p.37 / Chapter 3.2.2 --- X-Ray Diffraction (XRD) --- p.40 / Chapter 3.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.40 / Chapter 3.3 --- Implant Beam Current Dependence Of As-implanted Samples --- p.43 / Chapter 3.3.1 --- Sheet Resistance Measurement --- p.43 / Chapter 3.3.2 --- X-Ray Diffraction (XRD) --- p.44 / Chapter 3.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.46 / Chapter 3.4 --- Transmission Electron Microscopy (TEM) --- p.48 / Chapter 3.5 --- Summary --- p.52 / Chapter 4 --- Characterization of Annealed Samples --- p.57 / Chapter 4.1 --- Introduction --- p.57 / Chapter 4.2 --- Dose Dependence Of Annealed Samples --- p.58 / Chapter 4.2.1 --- Sheet Resistance Measurements --- p.58 / Chapter 4.2.2 --- X-Ray Diffraction (XRD) --- p.61 / Chapter 4.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.63 / Chapter 4.3 --- Implant Beam Current Dependence Of Annealed Samples --- p.66 / Chapter 4.3.1 --- Sheet Resistance Measurement --- p.66 / Chapter 4.3.2 --- X-Ray Diffraction (XRD) --- p.68 / Chapter 4.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.70 / Chapter 4.4 --- Annealing Temperature Dependence Of Annealed Samples --- p.71 / Chapter 4.4.1 --- Sheet Resistance Measurement --- p.71 / Chapter 4.4.2 --- X-Ray Diffraction (XRD) --- p.73 / Chapter 4.4.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.75 / Chapter 4.5 --- Annealing Time Dependence Of Annealed Samples --- p.78 / Chapter 4.5.1 --- Sheet Resistance Measurement --- p.78 / Chapter 4.5.2 --- X-Ray Diffraction (XRD) --- p.79 / Chapter 4.5.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.81 / Chapter 4.6 --- Transmission Electron Microscopy (TEM) --- p.82 / Chapter 4.7 --- Summary --- p.84 / Chapter 5 --- Conclusion --- p.87 / Chapter 5.1 --- Main Results Of This Work --- p.87 / Chapter 5.2 --- Suggestions To Future Works --- p.89 / Bibliography

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322632
Date January 1999
ContributorsLai, Kwong-Yu., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xvii, 101 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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