Molecular beam epitaxy of gallium arsenide antimonide-based ultra-high-speed double heterojunction bipolar transistors and light emitting transistors /

Description

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006. / Source: Dissertation Abstracts International, Volume: 68-02, Section: B, page: 1204. Adviser: Keh-Yung Cheng. Includes bibliographical references (leaves 83-90) Available on microfilm from Pro Quest Information and Learning.

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1. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3250345

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/191674598
Date	January 2006
Creators	Wu, Bing-Ruey.
Source Sets	OCLC
Language	English
Detected Language	English