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Field emission properties of a silicon tip array.

Fung Yun Ming. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 134-140). / Abstracts in English and Chinese. / Abstract --- p.I / Acknowledgement --- p.III / Contents --- p.IV / List of Figure captions --- p.VIII / List of Table captions --- p.XIII / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Theory and Applications / Chapter 2.1 --- Principle of field emission / Chapter 2.1.1 --- The Fowler-Nordheim Theory --- p.3 / Chapter 2.1.2 --- Field emission from metals --- p.6 / Chapter 2.1.3 --- Field emission from semiconductors --- p.8 / Chapter 2.1.3.1 --- Advantages and limitations of silicon --- p.9 / Chapter 2.1.4 --- Application of the Fowler-Nordheim theory --- p.10 / Chapter 2.1.5 --- Factors influencing field emission efficiency --- p.11 / Chapter 2.2 --- Applications --- p.11 / Chapter 2.2.1 --- Operation of a Field Emission Displays --- p.11 / Chapter 2.2.2 --- Basic structure of a Field Emission Displays --- p.13 / Chapter 2.2.3 --- Parameters relevant to applications --- p.15 / Chapter 2.3 --- The fabrication processes --- p.17 / Chapter 2.3.1 --- The anisotropic wet etching method --- p.18 / Chapter 2.3.2 --- The isotropic wet etching method --- p.19 / Chapter 2.3.3 --- Field emission from coating materials --- p.20 / Chapter 2.3.3.1 --- Coating enhancement --- p.20 / Chapter 2.3.3.2 --- Diamond and diamond-like films --- p.21 / Chapter 2.3.3.3 --- Metallic coatings --- p.22 / Chapter 2.3.3.4 --- Porous silicon coatings --- p.22 / Chapter 2.3.3.5 --- Silicon carbide coatings --- p.22 / Chapter 2.3.4 --- Fabrication of field emitters with gate --- p.23 / Chapter Chapter 3 --- Sample Preparation and Characterization Methods / Chapter 3.1 --- Sample preparation --- p.25 / Chapter 3.2 --- The fabrication process / Chapter 3.2.1 --- Isotropic etching of silicon / Chapter 3.2.1.1 --- The anodization process --- p.25 / Chapter 3.2.1.2 --- Porous silicon formation --- p.26 / Chapter 3.2.2 --- Anistropic etching of silicon --- p.27 / Chapter 3.2.3 --- The sputtering system --- p.28 / Chapter 3.2.4 --- The MEVVA Ion Source Implanter --- p.30 / Chapter 3.3 --- Characterization Methods / Chapter 3.3.1 --- Atomic Force Microscopy (AFM) --- p.32 / Chapter 3.3.2 --- Scanning Electron Microscopy (SEM) --- p.34 / Chapter 3.3.3 --- Field emission measurement / Chapter 3.3.3.1 --- Vacuum requirements --- p.35 / Chapter 3.3.3.2 --- Testing system / Chapter 3.3.3.3 --- Fluctuation of field emission --- p.38 / Chapter Chapter 4 --- Fabrication of Silicon Tips and their field emission charateristics / Chapter 4.1 --- The anodization etching process / Chapter 4.1.1 --- Introduction --- p.40 / Chapter 4.1.2 --- Experimental details --- p.42 / Chapter 4.1.3 --- Results and Discussions / Chapter 4.1.3.1 --- N type (100) sample --- p.45 / Chapter 4.1.3.2 --- Ntype(lll) sample --- p.60 / Chapter 4.1.3.3 --- Fluctuations of the emission current --- p.64 / Chapter 4.1.3.4 --- The effect of Concentration of HF solution on First Step Anodization --- p.68 / Chapter 4.1.3.5 --- The effect of the Concentration of HF solution on Second Step Anodization --- p.70 / Chapter 4.1.3.6 --- Gated silicon field emitter --- p.70 / Chapter 4.1.4 --- Conclusions --- p.73 / Chapter 4.2 --- Anisotropic texturing process / Chapter 4.2.1 --- Introduction --- p.74 / Chapter 4.2.2 --- Experimental details --- p.76 / Chapter 4.2.3 --- Results and Discussions --- p.78 / Chapter 4.2.4 --- Conclusion --- p.92 / Chapter 4.3 --- Formation of Porous Silicon Layer on silicon / Chapter 4.3.1 --- Introduction --- p.93 / Chapter 4.3.2 --- Experimental details --- p.94 / Chapter 4.3.3 --- Results and Discussions --- p.95 / Chapter 4.3.4 --- Conclusion --- p.100 / Chapter 4.4 --- Chapter Summary --- p.101 / Chapter Chapter 5 --- Improvement in the field emission characteristics of the silicon tips upon coating with low work function materials / Chapter 5.1 --- Amorphous carbon coating / Chapter 5.1.1 --- Introduction --- p.102 / Chapter 5.1.2 --- Experimental details --- p.103 / Chapter 5.1.3 --- Results and Discussions --- p.104 / Chapter 5.1.4 --- Conclusion --- p.118 / Chapter 5.2 --- Silicon carbide coated Silicon emitter by MEWA / Chapter 5.2.1 --- Introduction --- p.119 / Chapter 5.2.2 --- Experimental details --- p.120 / Chapter 5.2.3 --- Results and Discussions --- p.121 / Chapter 5.2.4 --- Conclusion --- p.125 / Chapter 5.3 --- Chapter Summary --- p.126 / Chapter Chapter 6 --- Conclusions --- p.127 / Reference --- p.134 / List of publications --- p.140

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323426
Date January 2001
ContributorsFung, Yun Ming., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xiii, 140 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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