Return to search

Electrically active defects in 4H silicon carbide /

Diss. Linköping : Univ., 2003.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/186484898
Date January 2003
CreatorsStorasta, Liutauras.
PublisherLinköping : Univ.,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
Sourcesammanfattning på engelska (spikblad)

Page generated in 0.0017 seconds