For circuit simulation and device optimisation it is necessary to have one consistent model which describes not only the DC-behaviour of the device correcty but also the the small-signal and noise behaviour. This work presents a rigorous modell-description of an InP based heterojunction bipolartransitor taking into account material specific effects for all bias conditions.
| Identifer | oai:union.ndltd.org:DUETT/oai:DUETT:duett-03282006-114735 |
| Date | 05 April 2006 |
| Creators | Ehrich, Silja |
| Contributors | Prof. Dr. rer. nat. F.-J. Tegude, Prof. Dr. -Ing. G. Böck |
| Publisher | Gerhard-Mercator-Universitaet Duisburg |
| Source Sets | Dissertations and other Documents of the Gerhard-Mercator-University Duisburg |
| Language | German |
| Detected Language | English |
| Type | text |
| Format | application/pdf, text/html |
| Source | http://www.ub.uni-duisburg.de/ETD-db/theses/available/duett-03282006-114735/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. Hiermit erteile ich der Universitaet Duisburg das nicht-ausschliessliche Recht unter den unten angegebenen Bedingungen, meine Dissertation, Staatsexamens- oder Diplomarbeit, meinen Forschungs- oder Projektbericht zu veroeffentlichen und zu archivieren. Ich behalte das Urheberrecht und das Recht das Dokument zu veroeffentlichen und in anderen Arbeiten weiterzuverwenden. |
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