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Zur atomaren und elektronischen Struktur der Oberflächen und Grenzflächen antimonhaltiger Halbleiter / Towards the atomic and electronic structure of the surfaces and interfaces of antimony containing semiconductors

The effect of the group-V termination of GaAsSb(100) surfaces on the sharpness of InP/GaAsSb heterointerfaces was investigated. Lattice matched GaAsSb/InP(100)-layers were grown by metalorganic vapor phase epitaxy (MOVPE). Contamination free sample transfer from the MOVPE reactor into ultrahigh vacuum (UHV) allowed for the correlation of in-situ reflectance anisotropy/difference (RA/RD) spectra with low energy electron diffraction (LEED) and photoelectron spectra (XPS/UPS). The in-situ RA spectra indicated that the GaAsSb surface was Sb-rich during growth and turned preferably into an As-rich surface after growth. With LEED and XPS the Sb-rich and As-rich surfaces were correlated with (4×3) and c(4×4) symmetries, respectively. These are well known reconstructions from the related binaries GaAs and GaSb. The study of the InP/GaAsSb interfaces compared the two ordered GaAsSb(100) surfaces as templates for InP growth. XPS measurements of InP/GaAsSb interfaces taken in UHV and I-V curves of InP/GaAsSb resonant tunneling diodes indicated that Sb segregation into a subsequent InP layer was significantly lower when the InP film was grown on the c(4×4) reconstructed GaAsSb surface compared to the (4×3) reconstructed surface.

Identiferoai:union.ndltd.org:DUETT/oai:DUETT:duett-04042005-122310
Date12 April 2005
CreatorsKollonitsch, Zadig
ContributorsProf. Dr. rer.-nat. F.-J. Tegude, Prof. Dr. rer.-nat. F. Willig
PublisherGerhard-Mercator-Universitaet Duisburg
Source SetsDissertations and other Documents of the Gerhard-Mercator-University Duisburg
LanguageGerman
Detected LanguageEnglish
Typetext
Formatapplication/octet-stream, application/pdf, text/html
Sourcehttp://www.ub.uni-duisburg.de/ETD-db/theses/available/duett-04042005-122310/
Rightsunrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. Hiermit erteile ich der Universitaet Duisburg das nicht-ausschliessliche Recht unter den unten angegebenen Bedingungen, meine Dissertation, Staatsexamens- oder Diplomarbeit, meinen Forschungs- oder Projektbericht zu veroeffentlichen und zu archivieren. Ich behalte das Urheberrecht und das Recht das Dokument zu veroeffentlichen und in anderen Arbeiten weiterzuverwenden.

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