This thesis investigates the effects of ionizing radiation on the noise properties of n-channel power DMOS transistors. The pre-irradiation noise power spectral density of these transistors was found to vary as 1/ flambda where lambda (the slope of the noise power spectral density when plotted on a log-log scale) ranged from approximately 0.5 to 1.0. Radiation-induced trapped charge density was found to have a large effect on the magnitude and slope of the noise. Irradiation of devices was found to produce a more uniform distribution in time constants leading to the more ideal 1/f noise power spectrum as total dose increased. Polarity of bias applied during post-radiation anneal was found to force a distribution in time constants leading to an increase in lambda for devices under negative gate bias and a decrease in lambda for devices under positive gate bias. Radiation hardness of power MOSFETs was investigated as a function of their pre-irradiation 1/f noise. No correlation was found between noise magnitude and device hardness.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/277934 |
| Date | January 1991 |
| Creators | Babcock, Jeffrey Archimedes, 1961- |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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