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Electromigration characterization of aluminum thin films

As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become a primary reliability concern. The issues concerning electromigration testing are addressed and an effective test for characterizing electromigration failures is presented. It is shown that this test is a reliable and sensitive measure for determining electromigration resistance based upon the construction of an electromigration database using this test. Lastly, the implementation of an electromigration process control test based upon the characterization is discussed.

Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/278078
Date January 1992
CreatorsAmtsfield, Joel, 1968-
ContributorsSchrimpf, Ronald D.
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
Languageen_US
Detected LanguageEnglish
Typetext, Thesis-Reproduction (electronic)
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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