The minority carrier generation lifetime is a parameter of central importance in the characterization, design, and operation of solid state devices. Various methods have been described for measuring the lifetime using an MOS capacitor (MOS-C). They can be classified according to the kind of voltage applied, the quantities measured, and the required elaboration of experimental results. This thesis discusses two groups of methods for determining the lifetime using an MOS-C: pulsed voltage methods and voltage sweep methods. The objective of this thesis is to give a comprehensive review and comparison of various methods for determination of minority carrier lifetime using an MOS-C. To accomplish this objective, the theory is presented as it exists in each respective reference, and the experiment is conducted based on the theory. Sometimes the theory is modified to include effects not considered in the original reference.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/278309 |
| Date | January 1993 |
| Creators | Park, Young-bog, 1963- |
| Contributors | Parks, Harold G. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
Page generated in 0.0021 seconds