The effect of non-catastrophic human body model positive electrostatic discharge pulses on the radiation response of low power VDMOS N-channel transistors is explored. The effect of multiple pulses of HBM ESD is to cause a change in threshold-voltage shifts between stressed and non-stressed devices when exposed to Co₆₀ gamma radiation. This difference is due to the build-up of a space charge region next to the Si/SiO₂ interface. This space charge region reduces the net electric field across the gate oxide when biased with a positive voltage and thus reduces the formation of holes and interface traps. Therefore, the ESD stressed devices appear to be less sensitive to radiation.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/277850 |
| Date | January 1991 |
| Creators | Baum, Keith Warren, 1959- |
| Contributors | Schrimpf, R. D. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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