Several sputtering depositions were done by direct current (DC) magnetron sputtering epitaxy (MSE) techniquefor the goal of improving the growth rate and crystalline quality of GaN thin film on Al2O3 substrate. Thegrowth rate was higher when substrate-to-target distance D = 7 cm compared with D = 9.3 cm with eitherfloating or positive bias on the substrate side. The crystalline quality was improved by raising up the growthtemperature from 700◦C to 900◦C, but the quality was declined from 900◦C to 1000◦C due to strong desorption.Gas composition in the metal mode gives better quality due to its sufficient Ga condition with less N2. Positivesubstrate bias boosted the plasma potential and therefore created higher actual sputtering power comparedwith the condition at floating substrate potential. In general, applying a higher power can elevate the growthrate and film quality. However, there has not been an evident difference of both growth rate and film qualitywhen the actual sputtering power is close for floating substrate potential and positive substrate bias.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-189258 |
| Date | January 2021 |
| Creators | Lo, Yi-Ling |
| Publisher | Linköpings universitet, Tunnfilmsfysik |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | LiTH-IFM-R / Institutionen för fysik och mätteknik, Universitetet i Linköping, 0281-501X, LITH-IFM-A-EX–21/4049–SE, LITH-IFM-A-EX–21/4049–SE |
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