Yeung Chun Fai = 厚度和眞空熱處理對單晶 La0.67Ca0.33MnO3 薄膜特性之影響 / 楊進輝. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yeung Chun Fai = Hou du he zhen kong re chu li dui dan jing La0.67Ca0.33MnO3 bo mo te xing zhi ying xiang / Yang Jinhui. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iv / Table of contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xiii / Chapter Chapter I --- Introduction / Chapter 1.1 --- Development of magnetoresistance materials --- p.1-1 / Chapter 1.1.1 --- Magnetoresistance (MR) --- p.1-1 / Chapter 1.1.2 --- Anisotropy magnetoresistance (AMR) --- p.1-1 / Chapter 1.1.3 --- Giant magnetoresistance (GMR) --- p.1-2 / Chapter 1.1.4 --- Colossal magnetoresistance (CMR) in rare-earth manganites --- p.1-3 / Chapter 1.1.5 --- Possible origin of CMR in rare-earth manganites --- p.1-4 / Chapter 1.1.5.1 --- Double exchange mechanism --- p.1-4 / Chapter 1.1.5.2 --- Jahn-teller effect --- p.1-6 / Chapter 1.1.5.3 --- Other mechanisms --- p.1-7 / Chapter 1.1.6 --- Possible origins of CMR in Thallium manganite pyrochlores (TI2Mn207) --- p.1-7 / Chapter 1.2 --- New developments in manganite materials --- p.1-8 / Chapter 1.3 --- Our approach --- p.1-8 / Chapter 1.3.1 --- Why choose La0 .67Ca0.33Mn03 material? --- p.1-8 / Chapter 1.3.2 --- The role of oxygen content in manganite materials --- p.1-9 / Chapter 1.4 --- The scope of this thesis work --- p.1-11 / References --- p.1-12 / Chapter Chapter II --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.2-1 / Chapter 2.1.1 --- Introduction --- p.2-1 / Chapter 2.1.2 --- Facing-target sputtering (FTS) --- p.2-3 / Chapter 2.1.3 --- Deposition profile calculation for sputtering with FTS --- p.2-4 / Chapter 2.1.4 --- Vacuum system --- p.2-7 / Chapter 2.2 --- Characterization --- p.2-8 / Chapter 2.2.1 --- Profilometer --- p.2-8 / Chapter 2.2.2 --- Atomic force microscopy (AFM) --- p.2-8 / Chapter 2.2.3 --- X-ray diffraction (XRD) --- p.2-8 / Chapter 2.2.4 --- Resistance and magnetoresistance measurement --- p.2-10 / Chapter 2.2.5 --- Hall effect measurement --- p.2-11 / References --- p.2-13 / Chapter Chapter III --- Epitaxial growth of La0.67Ca0.33 Mn03 thin films / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Fabrication and characteristics of LCMO target --- p.3-1 / Chapter 3.3 --- Substrate materials --- p.3-5 / Chapter 3.4 --- Deposition --- p.3-10 / Chapter 3.4.1 --- Sample preparation --- p.3-10 / Chapter 3.4.2 --- Substrate temperature --- p.3-10 / Chapter 3.4.3 --- Deposition process --- p.3-17 / Chapter 3.5 --- Post-annealing effect --- p.3-18 / Chapter 3.6 --- Film composition analysis --- p.3-22 / Chapter 3.7 --- Epitaxial growth examination --- p.3-22 / References --- p.3-27 / Chapter Chapter IV --- Thickness effect in single-crystal LCMO thin films grown on NGO and STO / Chapter 4.1 --- Motivation --- p.4-1 / Chapter 4.2 --- Resistance measurement --- p.4-2 / Chapter 4.3 --- Magnetoresistance (MR) --- p.4-8 / Chapter 4.4 --- Crystal structure --- p.4-12 / Chapter 4.5 --- Surface morphology --- p.4-16 / Chapter 4.6 --- Hall effect measurement --- p.4-19 / Chapter 4.6.1 --- Basic principle --- p.4-19 / Chapter 4.6.2 --- Experiment --- p.4-20 / Chapter 4.6.3 --- Carrier concentration & mobility --- p.4-20 / Chapter 4.7 --- Discussions --- p.4-25 / References --- p.4-27 / Chapter Chapter V --- Strain dependent vacuum annealing effectin single-crystal La0.67Ga0.33MnO3 thin films / Chapter 5.1 --- Motivation --- p.5-1 / Chapter 5.2 --- Sample description --- p.5-1 / Chapter 5.3 --- Vacuum annealing process --- p.5-2 / Chapter 5.4 --- Crystal structure --- p.5-2 / Chapter 5.5 --- Resistance measurement --- p.5-6 / Chapter 5.6 --- Discussions --- p.5-8 / Chapter 5.6.1 --- Lattice expansion --- p.5-8 / Chapter 5.6.2 --- Determination of oxygen content --- p.5-9 / References --- p.5-11 / Chapter Chapter VI --- Activation energy of small polaron in La0.67Ca0.33MnO3 thin films / Chapter 6.1 --- Motivation --- p.6-1 / Chapter 6.2 --- Basic theory --- p.6-1 / Chapter 6.2.1 --- Variable range hopping --- p.6-1 / Chapter 6.2.2 --- Semiconduction --- p.6-2 / Chapter 6.2.3 --- Nearest-neighbor hoping of small polarons --- p.6-2 / Chapter 6.3 --- Sample description --- p.6-3 / Chapter 6.4 --- Resistance measurement --- p.6-4 / Chapter 6.5 --- Activation energy --- p.6-4 / Chapter 6.6 --- Discussions --- p.6-5 / References --- p.6-12 / Chapter Chapter VII --- Conclusions --- p.7-1
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323178 |
| Date | January 2000 |
| Contributors | Yeung, Chun Fai., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, 1 v. (various paging) : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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