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Use of an epitaxial BaF₂ buffer layer on silicon to control WO₃ thin film growth /

Thesis (M.S.) in Physics--University of Maine, 2002. / Includes vita. Bibliography: leaves 74-77.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/54344458
Date January 2002
CreatorsDoucette, Luke D.,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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