Return to search

Design and Fabrication of High-Coupling Efficiency Beam Expander Integrated Laser Diode

The purpose of this thesis is to design and fabricate the S-shaped profile in depth. The results are applied to design a beam expander. In the experiments, we use the local etch-rate control, i.e. diffusion-limited etching, to fabricate the S-shaped profile. The etchant solution and recipe is H3PO4:H2O2:H2O =98:1:1 at 21¢J without stirring. The diffusion length of the etchant solution is 12.5mm.
The device includes active semiconductor laser and passive tapered waveguide (beam expander). The design of the passive waveguide includes the lateral and vertical directions. In the lateral aspect, we use FimmWave to simulate the best symmetrical far field angle. When the waveguide width is 2.5mm and the etching depth is 1.4mm, we can get the best symmetrical far field angle which is lateral 27.88¢X and vertical 27.76¢X. In the vertical aspect, we use diffusion-limited etching to fabricate the depth changing. In this thesis, we use the beam expander length 350, 400, 450, 500mm.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708104-131521
Date08 July 2004
CreatorsWu, Chun-Ta
ContributorsTao-yuan Chang, Lung-han Peng, Ching-ting Lee, Kuo-jui Lin, Tsong-sheng Lay
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-131521
Rightsnot_available, Copyright information available at source archive

Page generated in 0.0017 seconds