In this thesis, with external cavity semiconductor laser, a high lateral resolution thickness measurement is proposed and demonstrated. The approach is typical an intra-cavity measurement of focused cell thickness by wavelength tuning of an external cavity laser diode. In addition, using blue light of 406nm as laser diode, higher lateral resolution is also observed. Using the proposed thickness method, the lateral resolution and longitudinal resolution have been demonstrated with 20£gm and 0.15£gm, respectively. We also discuss the feasibility of £gm scaled lateral resolution through improvement of laser diode, such as M^2~1.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0717112-175258 |
| Date | 17 July 2012 |
| Creators | Ho, Ji-Bin |
| Contributors | Ann-Kuo Chu, Chao-Kuei Lee, Yi-Jen Chiu, Wei-Hung Su |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-175258 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.0024 seconds