A semiconductor based gas sensor was developed by integrating a gas sensitive polymer with a floating-gate metal-oxide-semiconductor (FGMOS). The integration of the gas sensitive polymer with a semiconductor device enables the design of a large sensor array in a single chip for electronic sensing application. A new FGMOS structure was designed to reduce the number of post-processing steps during electrochemical polymer deposition. In this new design, the top metal layer of a standard CMOS process was used as an extended sensor pad which was connected to the floating gate. A sensor chip was designed using a standard 0.35 µm CMOS process. A polymer film was selectively deposited on the top metal layer (sensor pad) of a FGMOS using two post processing steps. The sensor response was measured by exposing the sensor in different concentration of water and methanol vapor. A short pulse measurement technique was introduced to measure the sensor response which was not affected by the measurement parameters.
| Identifer | oai:union.ndltd.org:MANITOBA/oai:mspace.lib.umanitoba.ca:1993/23437 |
| Date | 10 April 2014 |
| Creators | Tareq, Md. Obaej |
| Contributors | Buchanan,Douglas A. (Electrical and Computer Engineering), Thomson, Douglas (Electrical and Computer Engineering) Freund, Michael S. (Chemistry) |
| Source Sets | University of Manitoba Canada |
| Detected Language | English |
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