Return to search

Numerical Modeling of Self-heating in MOSFET and FinFET Basic Logic Gates Using Effective Thermal Conductivity

Recent trend of minimization in microprocessors has introduced increasing self-heating effects in FinFET and MOSFET transistors. To study these self-heating effects, we developed self-consistent 3D models of FinFET and MOSFET basic logic gates, and simulated steady-state thermal transport for the worst heating case scenario. Incorporating size-dependent effective thermal conductivity of thin films instead of bulk values, these simulations provide a more accurate prediction of temperature rise in the logic gates. Results of our simulations predict higher temperature rise in FinFETs, compared to MOSFETs. Existence of buried oxide layer and confined geometry of FinFET structure are determined to be the most contributing to this higher temperature rise. To connect the results of our simulations to higher scale simulations, we proposed an equivalent thermal conductivity for each basic logic gate. These values were tested and found to be independent of the magnitude of chosen boundary conditions, as well as heat generation rate.

Identiferoai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/33496
Date26 November 2012
CreatorsPak Seresht, Elham
ContributorsAmon, Cristina
Source SetsUniversity of Toronto
Languageen_ca
Detected LanguageEnglish
TypeThesis

Page generated in 0.0019 seconds