The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct device classes - ferroelectric field effect transistors (FeFET), ferroelectric capacitors (FeCAP) and ferroelectric tunnel junctions (FTJ). Common to all three concepts is the adoption of a ferroelectric layer stack that acts either as gate dielectric in the FeFET or as the capacitor dielectric and tunneling barrier in the FeCAP or FTJ, respectively. A composite structure including an inevitably or purposefully formed dielectric layer is frequently adopted. In this work we report on the co-existence of all three memory concepts within one device structure and propose a 2T1C ferroelectric memory cell that allows the operation and comparative characterization of the trinity of ferroelectric memory devices.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77685 |
| Date | 21 February 2022 |
| Creators | Slesazeck, Stefan, Havel, Viktor, Breyer, Evelyn, Mulaosmanovic, Halid, Hoffmann, Michael, Max, Benjamin, Duenkel, Stefan, Mikolajick, Thomas |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-7281-0981-7, 10.1109/IMW.2019.8739742 |
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