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Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell

The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct device classes - ferroelectric field effect transistors (FeFET), ferroelectric capacitors (FeCAP) and ferroelectric tunnel junctions (FTJ). Common to all three concepts is the adoption of a ferroelectric layer stack that acts either as gate dielectric in the FeFET or as the capacitor dielectric and tunneling barrier in the FeCAP or FTJ, respectively. A composite structure including an inevitably or purposefully formed dielectric layer is frequently adopted. In this work we report on the co-existence of all three memory concepts within one device structure and propose a 2T1C ferroelectric memory cell that allows the operation and comparative characterization of the trinity of ferroelectric memory devices.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77685
Date21 February 2022
CreatorsSlesazeck, Stefan, Havel, Viktor, Breyer, Evelyn, Mulaosmanovic, Halid, Hoffmann, Michael, Max, Benjamin, Duenkel, Stefan, Mikolajick, Thomas
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-7281-0981-7, 10.1109/IMW.2019.8739742

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