Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76920 |
| Date | 08 December 2021 |
| Creators | O'Connor, Ian, Cantan, Mayeul, Marchand, Cédric, Vilquin, Bertrand, Slesazeck, Stefan, Breyer, Evelyn T., Mulaosmanovic, Halid, Mikolajick, Thomas, Giraud, Bastien, Noël, Jean-Philippe, Ionescu, Adrian, Igor, Igor |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-5386-4756-1, 10.1109/VLSI-SoC.2018.8644809, info:eu-repo/grantAgreement/European Commission/Horizon 2020/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO |
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