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Material perspectives of HfO₂-based ferroelectric films for device applications

Ferroelectric HfO₂ attracts a huge amount of attention not only for memory and negative capacitance, but also for programmable logic including memory-in-logic and neuromorphic applications. However, the understanding of material fundamentals still needs to be improved. This paper gives material fundamentals and new insights to this ferroelectric material for future device applications. In particular, the key role of dopants, effects of the interface on the ferroelectric phase, and a detailed discussion of the switching kinetics are of central focus. Based on material properties newly obtained, we discuss opportunities of ferroelectric HfO₂ for device applications.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:79647
Date20 June 2022
CreatorsToriumi, Akira, Xu, Lun, Mori, Yuki, Tian, Xuan, Lomenzo, Patrick D., Mulaosmanovic, Halid, Materano, Monica, Mikolajick, Thomas, Schroeder, Uwe
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-7281-4032-2, 10.1109/IEDM19573.2019.8993464

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