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Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors

So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large memory window (MW) for the first time. Moreover, we propose different integration schemes comprising structures with and without internal gate resulting in metal-FE-insulator-Si (MFIS) and metal-FE-metal-insulator-Si (MFMIS) devices which could be used to tackle the problem of interface (IF) degradation and possibly decrease the power consumption of the devices.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77564
Date25 January 2022
CreatorsWinkler, Felix, Pešić, Milan, Richter, Claudia, Hoffmann, Michael, Mikolajick, Michael, Bartha, Johann W.
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-72812-112-3, 10.1109/DRC46940.2019.9046463

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