This article corrects the following:
'Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering'
Advanced Materials Interfaces 6(11) 2019, first Published online: April 29, 2019
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:80524 |
Date | 30 August 2022 |
Creators | Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe |
Publisher | Wiley-VCH |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 2199-160X, https://doi.org/10.1002/admi.201900042, urn:nbn:de:bsz:14-qucosa2-805203, qucosa:80520, info:eu-repo/grantAgreement/European Commission/H2020 | RIA/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO, info:eu-repo/grantAgreement/National Research Foundation South Korea/Basic Science Research Program/NRF-2018R1C1B5086580/ |
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