Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor
(CHFET) devices and circuits were fabricated using MBE and a 2�� non-planar gate
recess process. Several schemes were used in an attempt to improve the performance of
the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping.
Circuits and individual n- and p- channel devices were fabricated on a stacked delta-doped
complementary structure. The circuits failed to perform due to complications with
adjusting the threshold voltage. However, Individual devices were successfully
characterized, p-channel devices with extrinsic transconductances up to 14 mS/mm, n-channel
devices with extrinsic transconductances up to 120 mS/mm and a unity power
gain bandwidth of 5.5 GHz. / Graduation date: 1995
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/34635 |
| Date | 10 June 1994 |
| Creators | McMahon, Terry E. (Terry Edwin), 1963- |
| Contributors | Goodnick, Stephen M. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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