Return to search

Quantum-mechanical modeling of transport parameters for MOS devices /

Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228. / Summary in German and English, text in English. Includes bibliographical references (p. 123-132).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/86110616
Date January 2006
CreatorsHöhr, Timm,
PublisherKonstanz : Hartnung-Gorre,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

Page generated in 0.0015 seconds