Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF-ratio in today's integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor and Ge heterostructures further improve the ON-state current and reduce SS due to the low bandgap energies and smaller carrier tunneling mass. The mixed arsenide/antimonide (As/Sb) InxGa1-xAs/GaAsySb1-y and Ge/InxGa1-xAs heterostructures allow a wide range of bandgap energies and various band alignments depending on the alloy compositions in the source and channel materials. Band alignments at source/channel heterointerface can be well modulated by carefully controlling the compositions of the InxGa1-xAs or GaAsySb1-y. In particular, this research systematically investigate the development and optimization of low-power TFETs using mixed As/Sb and Ge/InxGa1-xAs based heterostructures including: basic working principles, design considerations, material growth, interface engineering, material characterization, band alignment determination, device fabrication, device performance investigation, and high-temperature reliability. A comprehensive study of TFETs using mixed As/Sb and Ge/InxGa1-xAs based heterostructures shows superior structural properties and distinguished device performances, both of which indicate the mixed As/Sb and Ge/InxGa1-xAs based TFET as a promising option for high performance, low standby power and energy efficient logic circuit application. / Ph. D.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/47791 |
| Date | 02 May 2014 |
| Creators | Zhu, Yan |
| Contributors | Electrical and Computer Engineering, Hudait, Mantu K., Tao, Chenggang, Agah, Masoud, Manteghi, Majid, Lester, Luke F. |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Detected Language | English |
| Type | Dissertation |
| Format | ETD, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
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