As Si MOS approaches its maximum limits in speed and bandwidth, new
devices are desired to meet the needs of high speed communications and signal
processing. A device that exhibits superior performance to Si MOS, BJT, and
GaAs technology is the HEMT (high electron mobility transistor).
The HEMT offers superior transconductance, mobility, speed, and noise performance
compared to Si MOS, BJT, and standard GaAs technology. The high
performance is a result of improved channel mobility due to a heterojunction. At
the heterointerface, the majority carriers are confined to a very thin sheet forming
what has been termed a 2DEG (two dimensional electron gas).
The purpose of this thesis is to demonstrate the suitability of Honeywell's
delta-doped self-aligned complimentary HIGFET process for the realization of high
speed analog circuits. An operational amplifier and switched-capacitor circuit are
presented. The operational amplifier has been fabricated at Honeywell and preliminary
tests have been performed on the op-amp which are also presented. / Graduation date: 1998
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/33758 |
| Date | 12 September 1997 |
| Creators | Smith, Alexander B. |
| Contributors | Allstot, David J. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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