Return to search

Influence of source/drain residual implant lattice damage traps on silicon carbide metal semiconductor field effect transistor drain I-V characteristics

Thesis (Ph.D.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/502157891
Date January 2007
CreatorsAdjaye, John,
PublisherMississippi State : Mississippi State University,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeElectronic resources. Electronic theses/dissertations. Dissertations.

Page generated in 0.0018 seconds