Zinc selenide is a wide bandgap II-VI semiconductor. The minimum bandgap at
£F point (zone center) is direct and has a room temperature value of 2.67eV,
corresponding to the blue region of the visible spectrum (464nm).
Molecular beam epitaxy (MBE) is an ultra high vacuum technique used for the
growth of semiconductors. The molecular beam epitaxy system used for the growth
of semiconductors . The molecular beam epitaxy system used for growth of the
II-VI semiconductor layers is described in detail in Chapter 2. Chapter 3 describes the
substrate preparation procedure and growth of ZnSe epitaxial layers. Last, information
from characterization technique has been used to analysis the quality of the layers and
hence determine referred growth conditions.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627100-163547 |
| Date | 27 June 2000 |
| Creators | Kuan, Yu-An |
| Contributors | Herng-Yih,Ueng, Yeong-Her Wang, Mau-Phon Houng, Wei-Chou Hsu, Cheu-Pyeng Cheng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627100-163547 |
| Rights | unrestricted, Copyright information available at source archive |
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