The first-principles calculation method has been used to obtain electronic and structural properties of few-layer-graphenes (FLG) with and without an external electric potential Vext. For Vext=0, the AB stacked two-layer FLG has a band overlapping of 9meV. However, an energy gap (Eg) emerges when Vext is greater than about 0.04Volts. Beyond this threshold, Eg increases monotonically with the increase of Vext. The Eg vs. Vext result suggests a semi-metal-semiconductor transition in the AB stacked two-layer FLG, which can be utilized as a nanoscale electronic switch. Three- and four-layer AB stacked FLG¡¦s don¡¦t have a similar dependence of Eg on Vext
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0713107-135257 |
| Date | 13 July 2007 |
| Creators | Huang, Jhih-rong |
| Contributors | Min-Hsiung Tsai, Hsiung Chou, Chin-Fu Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713107-135257 |
| Rights | unrestricted, Copyright information available at source archive |
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