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Highly Integrated Dc-dc Converters

A monolithically integrated smart rectifier has been presented first in this work. The smart rectifier, which integrates a power MOSFET, gate driver and control circuitry, operates in a self-synchronized fashion based on its drain-source voltage, and does not need external control input. The analysis, simulation, and design considerations are described in detail. A 5V, 5-µm CMOS process was used to fabricate the prototype. Experimental results show that the proposed rectifier functions as expected in the design. Since no dead-time control needs to be used to switch the sync-FET and ctrl-FET, it is expected that the body diode losses can be reduced substantially, compared to the conventional synchronous rectifier. The proposed self-synchronized rectifier (SSR) can be operated at high frequencies and maintains high efficiency over a wide load range. As an example of the smart rectifier's application in isolated DC-DC converter, a synchronous flyback converter with SSR is analyzed, designed and tested. Experimental results show that the operating frequency could be as high as 4MHz and the efficiency could be improved by more than 10% compared to that when a hyper fast diode rectifier is used. Based on a new current-source gate driver scheme, an integrated gate driver for buck converter is also developed in this work by using a 0.35µm CMOS process with optional high voltage (50V) power MOSFET. The integrated gate driver consists both the current-source driver for high-side power MOSFET and low-power driver for low-side power iv MOSFET. Compared with the conventional gate driver circuit, the current-source gate driver can recovery some gate charging energy and reduce switching loss. So the current-source driver (CSD) can be used to improve the efficiency performance in high frequency power converters. This work also presents a new implementation of a power supply in package (PSiP) 5MHz buck converter, which is different from all the prior-of-art PSiP solutions by using a high-Q bondwire inductor. The high-Q bondwire inductor can be manufactured by applying ferrite epoxy to the common bondwire during standard IC packaging process, so the new implementation of PSiP is expected to be a cost-effective way of power supply integration.

Identiferoai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd-5225
Date01 January 2010
CreatorsJia, Hongwei
PublisherSTARS
Source SetsUniversity of Central Florida
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceElectronic Theses and Dissertations

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