It is known that electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. However each peak still contains two components, which belong to F+ F/2 and F- F/2 respectively, where F is the built-in field and F is the modulating field of applied voltage (Vac). In this work, we have used a larger Vac to modulate the field, and hence the peaks can be further separated. The peak belonging to heavy hole-transition and F- F/2 can be singled out to compare with Airy function-theory.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0616103-170431 |
| Date | 16 June 2003 |
| Creators | Lin, Yu-Chuan |
| Contributors | Ting-Chang Chang, Yan-Ten Lu, Dong-Po Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-170431 |
| Rights | withheld, Copyright information available at source archive |
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