The role of defects on Schottky and Ohmic contact characteristics for GaN and AlGaN/GaN high-electron mobility transistors

Description

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 209-217).

Links & Downloads

1. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1141766860

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/70272059
Date	January 2006
Creators	Walker, Dennis Eugene,
Publisher	Columbus, Ohio : Ohio State University,
Source Sets	OCLC
Language	English
Detected Language	English
Source	Connect to resource online