In this study, we discussed the capacitance-voltage characteristics of the GaN MOS structure with surface treatment using low energy ion beam prior to the oxide deposition. We used the E-Beam evaporator which was equipped with the ion beam assisted deposition system that originally used for optical thin film deposition. Before depositing SiO2 the surface was treated by low energy Ar+
with different processing time inside the vacuum chamber around 10-6 torr. The purpose was to reduce the density of interface states and to explore the influence of C-V characteristics of the GaN MOS structure.
We have measured the high frequency C-V curve, hysteresis, and also varied the delay time while measuring. Based on the measuring results, some useful parameters of the device were obtained. Found that the deep depletion
phenomenon and hysteresis were easy seen in high frequency C-V measurement. To lower the interfacial states of the sample and shorten the processing time of the low energy ion beam treatment yielded the better result.But the surface was easily damaged when the processing time was prolonged.At last we added the capacitance-voltage study of the Si MOS structure with surface treatment using low energy ion beam, and the capacitance-voltage study of the InN MOS structure.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725106-001627 |
| Date | 25 July 2006 |
| Creators | Tseng, Po- Lun |
| Contributors | Der Jun Jang, Tsu Chiang Yen, Li Wei Tu, Chie Tong Kuo, Shiow Fon Tsay |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725106-001627 |
| Rights | not_available, Copyright information available at source archive |
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