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First-principle study of interaction among 4-atomic-layer thick GaN nanodisks

The first-principles calculation method has been used to calculate the total energy and the dipole moment per disk of an array of four-atomic-layers thick GaN nanodisks as functions of their separation. The dipole moment per disk is found to increase with the separation of the disks and saturates at a separation between the edges of neighboring disks of about 11Å. This trend indicates that there exists a charge transfer effect, which gives rise to a dipole moment in opposite direction to the dipole moment associated with the two Ga-N bilayers when disks are close enough. The approximate total energy after the adjustment of the charge transfer effect is found to decrease with the increase of the separation of disks, which indicates that the intrinsic dipoles of the nanodisks gives rise to repulsive interactions among them.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0816105-165658
Date16 August 2005
CreatorsJiang, Jih-yu
ContributorsChin-fu Liu, Shiow-Fon Tsay, Min-Hsiung Tsai
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0816105-165658
Rightsoff_campus_withheld, Copyright information available at source archive

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