A hydride vapor phase epitaxy, (HVPE) was designed to grow nonpolar GaN. LiAlO2 single crystal grown by Czochralski (Cz) method in our lab was used as the substrate. The X-ray diffraction and scanning electron microscopy were used to study the GaN epilayer¡¦s orientation and surface morphology. At the first part, we used the c-plane sapphire as substrate and make sure that our HVPE reactive system is working. And the second part, we used LiAlO2 substrate to grow non-polar GaN substrate. After the growth, GaN was separated from LiAlO2 substrate and become free-standing. We found that as-grown GaN has both c-plane (0001) and m-plane (10-10) orientations. After some improvements, we got a nonpolar GaN substrate. But the m-plane (10-10) GaN grains are random. The photo-luminescence¡]PL¡^showed that the light emissive quality of these two GaN thick film are well. We will keep improving the design of our HVPE.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726109-180632 |
| Date | 26 July 2009 |
| Creators | Li, Chu-an |
| Contributors | Ming-Chi Chou, Gan, Der shin, Liuwen Chang, Jih-Jen Wu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726109-180632 |
| Rights | not_available, Copyright information available at source archive |
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