We invistegated the characteristic of GaN nanostructure grown on£^-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled at the LiAlO2 substrate. It was found that the [0001 ¡Â] disk was established with the capture of N atoms by most-outside Ga atoms, while the pyramid was obtained due to the missing of most-outside N atoms. To continue, the photointensity of cathode luminescence excited from the pillar structure was one order of amplitude greater than that from M-plane.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0724109-041248 |
| Date | 24 July 2009 |
| Creators | Hu, Chia-hsuan |
| Contributors | Mitch Chou, Ikai Lo, Jih-Chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248 |
| Rights | campus_withheld, Copyright information available at source archive |
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